Selected papers from the ULIS 2011 ConferenceFERAIN, Isabelle; FIEGNA, Claudio.Solid-state electronics. 2012, Vol 71, issn 0038-1101, 115 p.Conference Proceedings

Papers Selected from the Ultimate Integration on Silicon Conference 2009, ULIS 2009LEMME, Max; MANTL, Siegfried.Solid-state electronics. 2009, Vol 53, Num 12, issn 0038-1101, 126 p.Serial Issue

ULSI process integration IV (Quebec PQ, 16-20 May 2005)Claeys, C.L; Gonzalez, F; Zaima, S et al.Proceedings - Electrochemical Society. 2005, issn 0161-6374, isbn 1-56677-464-0, XIII, 434 p, isbn 1-56677-464-0Conference Proceedings

2005 ULIS Conference. Selected papersSANGIORGI, Enrico; FIEGNA, Claudio.Solid-state electronics. 2006, Vol 50, Num 1, issn 0038-1101, 104 p.Conference Proceedings

Characterization and metrology for ULSI technologySEILER, David G.IEEE transactions on semiconductor manufacturing. 2006, Vol 19, Num 4, pp 372-403, issn 0894-6507, 31 p.Conference Paper

On the current saturation in low dimensional MOSFETsBENFDILA, A; BENSIDHOUM, M. T.International conference on microelectronics. 2004, isbn 0-7803-8166-1, 2Vol, vol 1, 299-302Conference Paper

A novel process and thermodynamic mechanisms of air gap formation for ULSI applicationCHANG, Kow-Ming; YANG, Ji-Yi; CHEN, Lih-Woen et al.Thin solid films. 2000, Vol 376, Num 1-2, pp 124-130, issn 0040-6090Article

Differential silicide thickness for ULSI scalingTAYLOR, William J; SMITH, James; NGUYEN, Jen-Yee et al.Proceedings - Electrochemical Society. 2003, pp 278-287, issn 0161-6374, isbn 1-56677-376-8, 10 p.Conference Paper

Carbon nanotube technologies for future ULSI via interconnectsAWANO, Yuji.SPIE proceedings series. 2005, pp 37-44, isbn 0-8194-5706-X, 8 p.Conference Paper

The double jet ionizer for ULSI manufacturing processes : Special section on issues related to semiconductor manufacturing at technology nodes below 70 nmIMAZONO, Hiroyuki; TERASHIGE, Takashi; OKANO, Kazuo et al.IEEE transactions on semiconductor manufacturing. 2002, Vol 15, Num 2, pp 189-193, issn 0894-6507Article

Improvements in both thermal stability of Ni-silicide and electrical reliability of gate oxides using a stacked polysilicon gate structureJAM WEM LEE; LIN, Shen-Xiang; LEI, Tan-Fu et al.Journal of the Electrochemical Society. 2001, Vol 148, Num 9, pp G530-G533, issn 0013-4651Article

Epitaxial silicide interfaces in microelectronicsTUNG, R. T; OHMI, S.Thin solid films. 2000, Vol 369, Num 1-2, pp 233-239, issn 0040-6090Conference Paper

Compact quasi-analytic equations for estimating the temperature distribution of ULSI interconnectionsXIAO, X; YOU, X; RUAN, G et al.Microelectronic engineering. 2002, Vol 60, Num 3-4, pp 415-428, issn 0167-9317Article

Special Issue with Papers Selected from the Ultimate Integration on Silicon Conference, Ulis 2008SELMI, Luca; ESSENI, David; PALESTRI, Pierpaolo et al.Solid-state electronics. 2009, Vol 53, Num 4, issn 0038-1101, 68 p.Serial Issue

Thin film transistors in ULSI -status and futureYUE KUO.Proceedings - Electrochemical Society. 2003, pp 322-329, issn 0161-6374, isbn 1-56677-376-8, 8 p.Conference Paper

Novel SOI-like structures for improved thermal dissipationOSHIMA, K; CRISTOLOVEANU, S; GUILLAUMOT, B et al.IEEE International SOI conference. 2002, pp 95-96, isbn 0-7803-7439-8, 2 p.Conference Paper

Modelling and simulation for dielectric constant of aerogelXIA XIAO; STREITER, Reinhard; GANG RUAN et al.Microelectronic engineering. 2000, Vol 54, Num 3-4, pp 295-301, issn 0167-9317Article

Avoiding Cu hillocks during the plasma processKANG, Tsung-Kuei; CHOU, Wei-Yang.Journal of the Electrochemical Society. 2004, Vol 151, Num 6, pp G391-G395, issn 0013-4651Article

Characterization and reliability study of Al₂O₃ as an alternative gate dielectric for ULSI technologyROHIT KUMAR GUPTA; KATIYAR, Monica; OJHA, P. K et al.SPIE proceedings series. 2002, pp 659-663, isbn 0-8194-4500-2, 2VolConference Paper

Recent results of multi-cathode electron beam plasma sourceKIM, T. Y; NOH, S. J; JING, J. K et al.Thin solid films. 1999, Vol 345, Num 1, pp 178-181, issn 0040-6090Conference Paper

Formation of ULSI copper minute wiring by copper electro-deposition process using the pre-adsorption of additiveNAWAFUNE, Hidemi; AWANO, Maiko; AKAMATSU, Kensuke et al.Hyomen gijutsu. 2002, Vol 53, Num 1, pp 59-64, issn 0915-1869Article

Simplified monitoring technique for line-short defects that provides high sensitivity and high throughput : Technologies supporting semiconductor scientific manufacturing : Process monitoring, testing, failure analysis and reliabilityKIKUCHI, Hiroaki; KODAMA, Noriyuki; NISHIO, Naoharu et al.NEC research & development. 2000, Vol 41, Num 4, pp 332-335, issn 0547-051XArticle

Mainstreaming SOI CMOS technologySHAHIDI, G. G.SPIE proceedings series. 1999, pp 15-21, isbn 0-8194-3480-9Conference Paper

Current status of failure analysis for ULSIsNAKAJIMA, S; UEKI, T; SHIONOYA, Y et al.Microelectronics and reliability. 1998, Vol 38, Num 9, pp 1369-1377, issn 0026-2714Article

Tool commonality analysis for yield enhancementKONG, George.ASMC proceedings. 2002, pp 202-205, issn 1078-8743, isbn 0-7803-7158-5, 4 p.Conference Paper